DocumentCode :
2955442
Title :
Luminescence properties of Er3+-doped SiOx films containing amorphous Si nanoparticles
Author :
Chen, W.D. ; Chen, C.Y.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear :
2004
fDate :
29 Sept.-1 Oct. 2004
Firstpage :
75
Lastpage :
76
Abstract :
PL properties of Er3+ doped SiOx films containing Si nanoparticles have been studied. Er3+ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er3+ emission.
Keywords :
amorphous state; erbium; infrared spectra; nanostructured materials; optical films; photoluminescence; silicon compounds; thin films; Er3+ emission; Er3+-doped SiOx films; Si nanoparticles; SiO2:Er; amorphous nanoparticles; infrared spectra; luminescence properties; photoluminescence; Amorphous materials; Annealing; Crystallization; Erbium; Luminescence; Nanoparticles; Plasma temperature; Semiconductor films; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
Type :
conf
DOI :
10.1109/GROUP4.2004.1416658
Filename :
1416658
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2955442
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