Title :
Macroporous silicon: photonic crystal substrates at 1.55 /spl mu/m
Author :
Rowson, S. ; Chelnokov, A. ; David, S. ; Lourtioz, J.-M.
Author_Institution :
Inst. d´Electron. Fondamentale, CNRS, Orsay, France
Abstract :
Summary form only given. We present high quality PCs, covering a large area and designed at the standard telecommunication wavelength of 1.55 /spl mu/m. Large areas of triangular PC lattices of air holes are obtained by associating macroporous etching technology and 3-beam holographic lithography. Reflection characterisations are performed in the near infrared from 1 to 3 /spl mu/m for the two main crystal directions and both polarizations. A complete photonic band gap (PBG) is obtained, centered at 1.55 /spl mu/m wavelength.
Keywords :
etching; holography; optical communication equipment; optical planar waveguides; photolithography; photonic band gap; reflectivity; silicon; substrates; 1 to 3 mum; 1.55 /spl mu/m wavelength; 1.55 mum; 3-beam holographic lithography; Si; air holes; complete photonic band gap; high quality PCs; macroporous etching technology; macroporous silicon; main crystal directions; near infrared; photonic crystal substrates; reflection characterisations; standard telecommunication wavelength; triangular PC lattices; Etching; Holography; Lattices; Lithography; Personal communication networks; Photonic crystals; Polarization; Reflection; Silicon; Telecommunication standards;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910280
