Title :
QD geometry and electrical characteristics of Al/Si1-xGex/n-Si/Al heterodiodes with different crystalline orientations of Si1-xGex layers
Author :
Ligatchev, V. ; Wong, T.K.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Specific features of room-temperature I-V and C-V curves of Al/Si1-xGex/n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si1-xGex layers are studied experimentally and attributed to influence of quantum confinement effect.
Keywords :
Ge-Si alloys; aluminium; crystal orientation; semiconductor diodes; semiconductor heterojunctions; semiconductor quantum dots; silicon; surface morphology; 20 degC; Al-Si1-xGex-Si-Al; Al/Si1-xGex/n-Si/Al heterodiodes; Si1-xGex layers; crystalline orientations; electrical characteristics; quantum confinement effect; quantum dot geometry; room-temperature; surface morphology; Artificial intelligence; Capacitance-voltage characteristics; Carrier confinement; Charge carriers; Crystallization; Electric variables; Geometry; Quantum dot lasers; Surface morphology; Testing;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416659
