• DocumentCode
    2955470
  • Title

    QD geometry and electrical characteristics of Al/Si1-xGex/n-Si/Al heterodiodes with different crystalline orientations of Si1-xGex layers

  • Author

    Ligatchev, V. ; Wong, T.K.S.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    77
  • Lastpage
    79
  • Abstract
    Specific features of room-temperature I-V and C-V curves of Al/Si1-xGex/n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si1-xGex layers are studied experimentally and attributed to influence of quantum confinement effect.
  • Keywords
    Ge-Si alloys; aluminium; crystal orientation; semiconductor diodes; semiconductor heterojunctions; semiconductor quantum dots; silicon; surface morphology; 20 degC; Al-Si1-xGex-Si-Al; Al/Si1-xGex/n-Si/Al heterodiodes; Si1-xGex layers; crystalline orientations; electrical characteristics; quantum confinement effect; quantum dot geometry; room-temperature; surface morphology; Artificial intelligence; Capacitance-voltage characteristics; Carrier confinement; Charge carriers; Crystallization; Electric variables; Geometry; Quantum dot lasers; Surface morphology; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416659
  • Filename
    1416659
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2955470