DocumentCode
2955505
Title
MMIC process for integrated power converters
Author
Pereira, Antonio ; Albahrani, Sayed ; Parker, Anthony ; Town, Graham ; Heimlich, Michael
Author_Institution
Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia
fYear
2013
fDate
17-19 April 2013
Firstpage
277
Lastpage
279
Abstract
Commercial RF MMIC fabrication process technologies were investigated for fabrication of integrated switching power converters. Pulsed IV characterization of GaN FETs revealed ON resistance dependence on off state bias, and current collapse at high temperatures. The degradation in ON resistance and current collapse can severely impact the efficiency of switching circuits fabricated in these processes.
Keywords
III-V semiconductors; MMIC; gallium compounds; power convertors; radiofrequency integrated circuits; switching circuits; wide band gap semiconductors; GaN; ON resistance dependence; RF MMIC fabrication process technologies; current collapse; integrated switching power converters; off state bias; pulsed IV characterization; Field effect transistors; Gallium arsenide; Gallium nitride; MMICs; Resistance; Switches; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON Spring Conference, 2013 IEEE
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4673-6347-1
Type
conf
DOI
10.1109/TENCONSpring.2013.6584455
Filename
6584455
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