Title :
High-power 1.55 /spl mu/m AlGaInAs-InP DBR tapered laser
Author :
Zivanovic, S.R. ; Chou, T.M. ; Kirk, J.B. ; Evans, G.A.
Author_Institution :
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
Abstract :
Summary form only given. Several applications such as free space communication, laser radar, and night vision require a single mode, single-frequency laser with an optical power of /spl sim/1 W and a wavelength of 1.55 /spl mu/m. Recently, high power InGaAsP-InP tapered lasers were obtained at this wavelength with a single lateral mode, but still with numerous longitudinal modes. Here, we report on a high-power tapered AlGaInAs-InP distributed Bragg reflector (DBR) tapered single frequency laser.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser frequency stability; laser modes; laser transitions; optical communication equipment; ridge waveguides; semiconductor lasers; waveguide lasers; 1 W; 1.55 mum; AlGaInAs-InP; InGaAsP-InP; distributed Bragg reflector lasers; free space communication; high power InGaAsP-InP tapered lasers; high-power 1.55 /spl mu/m AlGaInAs-InP DBR tapered laser; laser radar; longitudinal modes; night vision; optical power; semiconductor lasers; single lateral mode; single mode; single-frequency laser; Diodes; Distributed Bragg reflectors; Indium phosphide; Kirk field collapse effect; Laser beams; Laser modes; Optical waveguides; Power generation; Power lasers; Zinc;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910287
