Title :
High-power broad-area InGaAsP/InP lasers
Author :
Tarasov, I.S. ; Pikhtin, Nikita A. ; Lyutetskiy, A.V. ; Skrynnikov, G.V. ; Alferov, Zh.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Summary form only given. There is a great interest in the achievement of the highest continuous wave (CW) output power from a single aperture laser diodes. 5W CW output power in /spl lambda/=1.48 /spl mu/m InGaAsP-InP broadened waveguide semiconductor lasers with 200 /spl mu/m mesastripe width has been achieved. Record-high CW optical output power of 11 W has been reached for a single 100-/spl mu/m-wide aperture 0.98 /spl mu/m wavelength laser.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; waveguide lasers; 0.98 mum; 1.48 mum; 100 mum; 11 W; 200 mum; 5 W; CW output power; InGaAsP-InP; InGaAsP-InP broadened waveguide semiconductor lasers; high-power broad-area lasers; mesastripe width; record-high CW optical output power; single aperture laser diodes; Apertures; Diode lasers; Indium phosphide; Optical recording; Optical waveguides; Power generation; Power lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
DOI :
10.1109/CLEOE.2000.910288
