High power AlGaAs/GaAsP-broad area laser diodes with 1 /spl mu/m- and 2 /spl mu/m large optical cavity structures

Author

Hulsewede, R. ; Sebastian, J. ; Wenzel, Hans

Author_Institution

Ferdinand Braun Inst. fur Hochstfrequenztechnik, Berlin, Germany

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. High power broad area (BA) laser diodes emitting at a wavelength of about 800 nm are key elements for laser technologies in pumping of solid state lasers and medical applications. For most applications, it is useful to diminish the vertical beam divergence. In this paper, this is realised by increasing the vertical spot size at the laser facet by widening the large optical cavity (LOC) structure for AlGaAs-GaAsP broad area laser diodes. The beam quality in vertical and lateral direction as well as the high power and aging behaviour are discussed, which are essential for laser applications.

Keywords

III-V semiconductors; ageing; aluminium compounds; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; optical testing; semiconductor device testing; semiconductor lasers; 1 mum; 2 mum; 800 nm; AlGaAs-GaAsP; AlGaAs-GaAsP broad area laser diodes; aging behaviour; beam quality; high power; large optical cavity; large optical cavity structures; laser applications; laser facet; laser technologies; lateral direction; medical applications; solid state lasers; vertical beam divergence; vertical direction; vertical spot size; Biomedical equipment; Biomedical optical imaging; Diode lasers; Laser beams; Laser excitation; Medical services; Optical pumping; Power lasers; Pump lasers; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.910289

Filename

910289