Title :
Doping density dependence of 4f-4f couplings between Er and Yb ions in nanocrystalline Si
Author :
Zhao, Xinwei ; Kohno, Kazuki ; Harako, S. ; Takahashi, Naoki ; Komuro, Shuji
Author_Institution :
Dept. of Phys., Tokyo Univ. of Sci., Japan
fDate :
29 Sept.-1 Oct. 2004
Abstract :
This paper presents the formation and time-resolved investigation of Er and Yb co-doped nc-Si thin films. Since the energy of the only one excited state 2F52/ of a Yb3+ ion is almost same to that of the second excited state 4I112/ of an Er3- ion, the optical transition between them is expected to raise the excitation rate of the Er3+ ion.
Keywords :
erbium; excited states; nanostructured materials; photoluminescence; semiconductor thin films; silicon; time resolved spectra; ytterbium; 4f-4f couplings; Er ions; Si:Er,Yb; Yb ions; doping density dependence; excited state; nanocrystalline Si; nc-Si thin films; optical transition; photoluminescence; time-resolved investigation; Doping; Erbium; Laser excitation; Laser theory; Optical waveguides; Physics; Stimulated emission; Temperature; Transistors; Waveguide lasers;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416664