DocumentCode :
2955718
Title :
Low-frequency measurements and modelling of MLC capacitors
Author :
Zhang, T. ; Yoo, I.K. ; Burton, L.C.
Author_Institution :
Coll. of Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
1989
fDate :
22-24 May 1989
Firstpage :
206
Lastpage :
211
Abstract :
A model based on electron trapping at electrode-ceramic interface states predicts a t-n dependence for leakage current. The model has two requirements: that the trap filling rate be proportional to the density of empty traps, and that the interface by inhomogeneous (patchy), so that the active area (i.e. the area with unfilled traps) decreases with time. Near room temperature (≲75°C) the model predicts that n should be near unity, capacitance should decrease logarithmically with time and be dispersion free, and conductance should increase linearly with frequency. As conduction current becomes significant (at temperatures above about 100°C), the model predicts that n should approach zero, conductance dispersion should decrease to zero, and low-frequency capacitance should vary inversely with frequency. The decay parameter n is predicted then to vary linearly with time and voltage and exponentially with temperature. All of these predictions are more or less confirmed by measurements made on commercial X7R, Z5U, and Y5V multilayer ceramic (MLC) capacitors, with agreement for Y5V being very good. Such low-frequency dispersion is similar to that seen for GaAs Schottky diodes with a damaged metal-semiconductor interface
Keywords :
capacitors; electron traps; leakage currents; metal-insulator boundaries; modelling; 100 degC; 75 degC; GaAs diodes; MLC capacitor modelling; Schottky diodes; X7R MLC; Y5V MLC; Z5U MLC; capacitance; conductance; conduction current; decay parameter; dispersion; electrode-ceramic interface states; electron trapping; empty trap density; frequency; inhomogeneous interface; leakage current; low-frequency capacitance; metal-semiconductor interface; room temperature; time; trap filling rate; unfilled trap area; voltage; Capacitance; Capacitors; Electron traps; Filling; Frequency; Interface states; Leakage current; Predictive models; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
Type :
conf
DOI :
10.1109/ECC.1989.77752
Filename :
77752
Link To Document :
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