Title :
Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films
Author :
Park, Nae-Man ; Kim, Tae-Youb ; Kim, Kyung-Hyun ; Sung, Gun Yong ; Cho, Kwan Sik ; Shin, Jung H. ; Kim, Baek-Hyun ; Park, Swng-Ju ; Lee, Jung-Kun ; Nastasi, Michael
Author_Institution :
Div. of Future Technol. Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
29 Sept.-1 Oct. 2004
Abstract :
The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.
Keywords :
amorphous semiconductors; elemental semiconductors; erbium; hydrogenation; photoluminescence; semiconductor quantum dots; semiconductor thin films; silicon; 1.54 mum; Er ions; Er luminescence; Er migration; Er-doped silicon films; Si:Er; amorphous silicon; hydrogenation effect; quantum dot films; Amorphous silicon; Annealing; Atmosphere; Erbium; Luminescence; Materials science and technology; Nanocrystals; Quantum dots; Semiconductor films; US Department of Transportation;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416673
