DocumentCode
2955744
Title
Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films
Author
Park, Nae-Man ; Kim, Tae-Youb ; Kim, Kyung-Hyun ; Sung, Gun Yong ; Cho, Kwan Sik ; Shin, Jung H. ; Kim, Baek-Hyun ; Park, Swng-Ju ; Lee, Jung-Kun ; Nastasi, Michael
Author_Institution
Div. of Future Technol. Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
92
Lastpage
94
Abstract
The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.
Keywords
amorphous semiconductors; elemental semiconductors; erbium; hydrogenation; photoluminescence; semiconductor quantum dots; semiconductor thin films; silicon; 1.54 mum; Er ions; Er luminescence; Er migration; Er-doped silicon films; Si:Er; amorphous silicon; hydrogenation effect; quantum dot films; Amorphous silicon; Annealing; Atmosphere; Erbium; Luminescence; Materials science and technology; Nanocrystals; Quantum dots; Semiconductor films; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416673
Filename
1416673
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