Title :
Monolithic integration of pin/HBT optical receiver with HBT comparator on InP substrate
Author :
Yano, Hiroshi ; Sawada, Sosaku ; Kato, Takashi ; Sasaki, Goro ; Doguchi, Kentaro ; Murata, Michio
Author_Institution :
Optoelectron. Sumiden Lab., RWCP, Yokohama, Japan
Abstract :
In summary, a pin photodiode, a transimpedance-type preamplifier, and a comparator have been monolithically integrated on an InP substrate with pin/HBT integration technology. The receiver OEIC with a comparator showed a sensitivity of -36.0 dBm at a bit error rate of 1×10-9 for 125 Mb/s optical signals. The successful integration of digital circuits with analog circuits and optical components promises a realization of high-performance parallel optical interconnections in the near future
Keywords :
III-V semiconductors; bipolar integrated circuits; comparators (circuits); indium compounds; integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; photodetectors; substrates; 125 Mbit/s; HBT comparator; InP; InP substrate; Mb/s optical signals; bit error rate; high-performance parallel optical interconnections; monolithic integration; optical components; pin/HBT integration technology; pin/HBT optical receiver; receiver OEIC; sensitivity; transimpedance-type preamplifier; Bit error rate; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Monolithic integrated circuits; Optical interconnections; Optical receivers; Optoelectronic devices; PIN photodiodes; Preamplifiers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484487
