DocumentCode :
2955926
Title :
Strain of the micro-sized cone-shape GeSi alloy film determined by Raman scattering
Author :
Chia, C.-T. ; Chen, L.J. ; Mashano, V.I. ; Cheng, H.H.
Author_Institution :
Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
fYear :
2004
fDate :
29 Sept.-1 Oct. 2004
Firstpage :
107
Lastpage :
109
Abstract :
We present the micro-Raman study of curved GexSi1-x/GeySi1-y heterostructure, and found the strain of the curved thin layer is proportional to the curvature, i.e. inversely proportional to the diameter.
Keywords :
Ge-Si alloys; Raman spectra; internal stresses; optical films; semiconductor heterojunctions; semiconductor materials; GeSi; GeSi alloy film strain; Raman scattering; Capacitive sensors; Germanium silicon alloys; Optical buffering; Optical films; Optical microscopy; Optical scattering; Raman scattering; Scanning electron microscopy; Silicon germanium; Strain measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
Type :
conf
DOI :
10.1109/GROUP4.2004.1416680
Filename :
1416680
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2955926
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