Experimental study of total ionizing dose radiation effects on MOS capacitor

Author

Sharashar, Karam ; Kayed, Somaya

Author_Institution

National Center for Radiat. Res. & Technol., Cairo, Egypt

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

273

Lastpage

276

Abstract

The aim of this paper is to investigate the total ionizing dose (TID) radiation effects on MOS capacitor wafer samples that are locally fabricated for this purpose. The oxide was prepared by dry-wet-dry oxidation technique at 1000 °C using N-type Si substrate of about 3 Ω.cm. The samples have been exposed to irradiation at different doses from 1Krad(SiO₂) up to 1Mrad(SiO₂) using two different Gamma sources for high and low radiation rates, a shift in C-V curves as a flat-band shifted from 0.3 up to 2.5V and interface states of irradiated samples increased from 2.45*10¹² up to 250*10¹² eV^-1 cm^-2. Shelf annealing effects have also been investigated.

Keywords

MOS capacitors; gamma-ray effects; 0.3 to 2.5 V; 1000 C; 1E3 to 1E6 rad; C-V curves; MOS capacitor; SiO₂; dry-wet-dry oxidation technique; interface states; ionizing dose radiation; radiation rates; shelf annealing effects; Capacitance; Capacitance-voltage characteristics; Electron traps; Ionizing radiation; MOS capacitors; MOS devices; Radiation effects; Rough surfaces; Surface roughness; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, The 14th International Conference on 2002 - ICM

Print_ISBN

0-7803-7573-4

Type

conf

DOI

10.1109/ICM-02.2002.1161546

Filename

1161546