Title :
New phase-matching scheme in second-harmonic generation using multilayered semiconductors
Author :
Ogasawara, N. ; Takeuchi, K. ; Chino, T. ; Miyamoto, M.
Author_Institution :
Univ. of Electro-Commun., Tokyo, Japan
Abstract :
Summary form only given. We propose a new periodic structure for second-harmonic generation (SHG) where the linear and nonlinear susceptibilities are modulated at a period of one wavelength of the harmonic wave giving rise to several new types of phase matching. The SHG device consists of (111)GaP/AlP alternating layers where the layer thickness is chosen to be half the harmonic wavelength in the medium for the fundamental wavelength 1.064 μm so that the index n and the nonlinearity d are modulated
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; nonlinear optical susceptibility; optical films; optical harmonic generation; optical modulation; refractive index; semiconductor thin films; (111)GaP/AlP alternating layers; 1.064 mum; GaP-AlP; SHG; SHG device; fundamental wavelength; harmonic wavelength; layer thickness; linear susceptibilities; multilayered semiconductors; nonlinear susceptibilities; nonlinearity; periodic structure; phase matching; phase-matching scheme; refractive index; second-harmonic generation; susceptibility modulation; Amplitude modulation; Coherence; Couplings; Frequency conversion; Mirrors; Periodic structures; Phase modulation; Polarization; Power system harmonics; Reflectivity;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484498
