CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps

Author

Lee, Myunghee ; Vendier, Olivier ; Brooke, Martin A. ; Jokerst, Nan Marie ; Leavitt, Richard P.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

47

Abstract

To utilize high efficiency, high speed compound CMOS semiconductor circuits with silicon circuitry, and to relax the circuit design constraints which are imposed by 50 W terminations, we report herein the integration of a double heterostructure GaAs-based high efficiency inverted (fingers on the bottom) metal-semiconductor-metal (I-MSM) thin film photodetector bonded directly onto the silicon receiver circuit

Keywords

CMOS digital integrated circuits; III-V semiconductors; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical films; optical receivers; photodetectors; semiconductor heterojunctions; semiconductor thin films; 155 Mbit/s; 50 W; CMOS optical receiver; GaAs; GaAs-based; Si; bottom; circuit design; double heterostructure; fingers; high efficiency; high speed compound CMOS semiconductor circuits; integrated compound semiconductor thin-film inverted MSM detector; metal-semiconductor-metal thin film photodetector; silicon circuitry; silicon receiver circuit; Capacitance; Detectors; Etching; Fingers; Optical amplifiers; Optical films; Optical receivers; Semiconductor thin films; Silicon; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484500

Filename

484500