DocumentCode
2956190
Title
Luminescence properties of Ge quantum dots produced by MBE at different temperatures
Author
Larrson, M. ; Eflving, A. ; Hussain, M.I. ; Holtz, P.O. ; Ni, W.X.
Author_Institution
Dept. of Phys. & Measurement Technol., Linkoping Univ., Sweden
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
124
Lastpage
126
Abstract
The influence of the growth temperature on the structural and optical properties of Ge quantum dots in Si has been studied. We show that intermixing of Si in the dots strongly affect the band alignments.
Keywords
elemental semiconductors; germanium; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; Ge; Ge quantum dots; MBE; Si intermixing; band alignments; growth temperature; luminescence; Atom optics; Atomic force microscopy; Capacitive sensors; Luminescence; Molecular beam epitaxial growth; Optical microscopy; Quantum dots; Substrates; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416693
Filename
1416693
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