Title :
Generation-recombination noise characteristics of GaAs MESFETs
Author :
Iqbal, M.A. ; Khan, S.H.
Author_Institution :
Dept. of Phys., Punjab Univ., Lahore
Abstract :
Low frequency noise measurements were carried out using MESFET devices at different frequency and temperature ranges. The spectra obtained in the ohmic regime are due to several 1/f and generation-recombination (g-r) noise components. This method can be used as a diagnostic tool to model the nature of the time varying process and to uncover the location of the deep traps. Different trap levels were detected and the drain/gate current noise suggested as good indicators of quality of a MESFET. The theory predicts the experimentally observed trend of g-r noise dependence on both gate and drain voltages. The device structure as well as the materials from which it is composed influenced the properties of traps
Keywords :
1/f noise; MESFET integrated circuits; electron traps; gallium arsenide; semiconductor device noise; 1/f noise; GaAs; GaAs MESFET; deep traps; device materials; device structure; drain voltage; drain/gate current noise; g-r noise; gate voltage; generation-recombination noise characteristics; low frequency noise measurements; ohmic regime; trap levels; Character generation; Frequency measurement; Gallium arsenide; Low-frequency noise; MESFETs; Noise generators; Noise level; Noise measurement; Temperature distribution; Voltage;
Conference_Titel :
Multi Topic Conference, 2003. INMIC 2003. 7th International
Conference_Location :
Islamabad
Print_ISBN :
0-7803-8183-1
DOI :
10.1109/INMIC.2003.1416694
