Generation-recombination noise characteristics of GaAs MESFETs

Author

Iqbal, M.A. ; Khan, S.H.

Author_Institution

Dept. of Phys., Punjab Univ., Lahore

fYear

2003

fDate

9-9 Dec. 2003

Firstpage

192

Lastpage

196

Abstract

Low frequency noise measurements were carried out using MESFET devices at different frequency and temperature ranges. The spectra obtained in the ohmic regime are due to several 1/f and generation-recombination (g-r) noise components. This method can be used as a diagnostic tool to model the nature of the time varying process and to uncover the location of the deep traps. Different trap levels were detected and the drain/gate current noise suggested as good indicators of quality of a MESFET. The theory predicts the experimentally observed trend of g-r noise dependence on both gate and drain voltages. The device structure as well as the materials from which it is composed influenced the properties of traps

Keywords

1/f noise; MESFET integrated circuits; electron traps; gallium arsenide; semiconductor device noise; 1/f noise; GaAs; GaAs MESFET; deep traps; device materials; device structure; drain voltage; drain/gate current noise; g-r noise; gate voltage; generation-recombination noise characteristics; low frequency noise measurements; ohmic regime; trap levels; Character generation; Frequency measurement; Gallium arsenide; Low-frequency noise; MESFETs; Noise generators; Noise level; Noise measurement; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Multi Topic Conference, 2003. INMIC 2003. 7th International

Conference_Location

Islamabad

Print_ISBN

0-7803-8183-1

Type

conf

DOI

10.1109/INMIC.2003.1416694

Filename

1416694