DocumentCode
295621
Title
Confinement dimensionality and nonradiative recombination lifetime of carriers in micro-fabricated semiconductors
Author
Nambu, Yoshihiro ; Kohmoto, Shigeru ; Asakawa, Kiyoshi
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
79
Abstract
In summary, we have calculated the size-dependent nonradiative carrier lifetime taking carrier confinement dimensionality into account. This calculation will enables us to discuss required value of S to obtain low threshold quantum wire/dot (QWR/D) lasers clearly
Keywords
carrier lifetime; laser theory; quantum well lasers; semiconductor quantum dots; semiconductor quantum wires; carrier confinement dimensionality; carrier lifetime; confinement dimensionality; laser theory; low threshold; micro-fabricated semiconductors; nonradiative recombination lifetime; quantum dot lasers; quantum wire lasers; size-dependent nonradiative carrier lifetime; Boundary conditions; Carrier confinement; Charge carrier density; Charge carrier lifetime; Equations; Etching; Fabrication; Microstructure; Shape; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484517
Filename
484517
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