Lateral confinement layer influence on static and dynamic properties of red resonant cavity light emitting diodes

Summary form given. Resonant cavity light emitting diodes (RCLEDs) operating at 650 nm have drawn much attention because they are suitable light sources for cost-effective POF communication systems. RCLED makes use of the cavity effect, which influences the optical properties, such as extraction efficiency, optical spectrum and far field distribution. It has been also shown that RCLEDs exhibit a reduced carrier recombination time leading to a higher modulation bandwidth. Furthermore introducing a lateral confinement layer in the DBR mirrors can increase the carrier density and thereby significantly improves the modulation response. We have used this effect in order to obtain RCLEDs having an increased modulation bandwidth without a dramatic reduction in optical power. Our study was focused on evaluating the influence of the oxide aperture size on the RCLED static and dynamic properties. Different devices (including devices without oxide layer) were compared in terms of output power, small-signal modulation bandwidth and temperature behaviour. Measurement results for two types of devices show that 200 MHz modulation bandwidth was achieved using an oxide aperture of 64 /spl mu/m.