Title :
Si:Er-based light emitting diodes for optoelectronic applications grown with sublimation MBE technique
Author :
Nik, Z. F Krasil ; Kuznetsov, V.P. ; Remizov, D.Yu. ; Shmagin, V.B.
Author_Institution :
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Various types of Si:Er-based LEDs grown with sublimation variant of traditional MBE (SMBE) technique are examined. The effect of breakdown nature on Er-related EL intensity and excitation efficiency is also investigated.
Keywords :
electroluminescence; elemental semiconductors; erbium; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; silicon; sublimation; EL intensity; Er:Si; Si:Er-based light emitting diodes; excitation efficiency; sublimation MBE; Breakdown voltage; Detectors; Electric breakdown; Erbium; Indium gallium arsenide; Light emitting diodes; P-n junctions; Pulse amplifiers; Silicon; Temperature;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416696
