Liquid phase epitaxial InGaAs on InP with rare-earth elements

Author

Gao, Wei ; Berger, Paul R. ; Hunsperger, Robert G. ; Pamulapati, Jagadeesh

Author_Institution

Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

87

Abstract

High quality In_0.53Ga_0.47As has been grown on semi-insulating (100) InP:Fe substrates. The growths were performed with rare-earth (Er, Gd, and Yb) doped liquid phase epitaxial (LPE) growth melts in a graphite boat. Hall measurements show improved electron mobility and reduced (n-type) carrier concentration. Photoluminescence (PL) shows rare-earth doped layers have a higher PL efficiency with narrower linewidths than undoped layers. However, two deep levels are created by the rare earth elements. The grown samples were also characterized by FT-IR, double crystal X-ray diffraction, EDAX, SIMS, and DLTS

Keywords

Fourier transform spectra; Hall mobility; III-V semiconductors; X-ray diffraction; deep level transient spectroscopy; deep levels; electron density; electron mobility; electron traps; erbium; gadolinium; gallium arsenide; indium compounds; infrared spectra; liquid phase epitaxial growth; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; ytterbium; DLTS; EDAX; FT-IR; Hall measurements; In_0.53Ga_0.47As; InGaAs:Er; InGaAs:Gd; InGaAs:Yb; InP; InP:Fe; LPE growth melts; PL efficiency; SIMS; carrier concentration; deep levels; double crystal X-ray diffraction; electron mobility; graphite boat; high quality In_0.53Ga_0.47As; liquid phase epitaxial InGaAs; n-type; narrower linewidths; photoluminescence; rare-earth elements; semi-insulating (100) InP:Fe substrates; Capacitance measurement; Capacitance-voltage characteristics; Doping; Epitaxial layers; Gettering; Impurities; Indium gallium arsenide; Indium phosphide; Photoluminescence; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484521

Filename

484521