Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region

Author

Adnane, B. ; Elfving, A. ; Zhao, M. ; Larsson, M. ; Magnuson, B. ; Ni, W.X.

Author_Institution

Dept. of Phys., Linkoping Univ., Sweden

fYear

2004

fDate

29 Sept.-1 Oct. 2004

Firstpage

136

Lastpage

138

Abstract

Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.

Keywords

Schottky gate field effect transistors; germanium; infrared detectors; photodetectors; semiconductor doping; semiconductor quantum dots; semiconductor quantum wells; silicon compounds; 20 K; 3 to 15 mum; B-modulation doped Ge-dot/SiGe-well multiple stacks; Ge-SiGe; MBE; MESFET; far-infrared detection; midinfrared detection; photodetectors; photoresponse; Dark current; Detectors; FETs; MESFETs; Photodetectors; Potential well; Quantum dots; Silicon germanium; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2004. First IEEE International Conference on

Print_ISBN

0-7803-8474-1

Type

conf

DOI

10.1109/GROUP4.2004.1416702

Filename

1416702