Title :
Mid/far-infrared detection using a MESFET with B-modulation doped Ge-dot/SiGe-well multiple stacks in the channel region
Author :
Adnane, B. ; Elfving, A. ; Zhao, M. ; Larsson, M. ; Magnuson, B. ; Ni, W.X.
Author_Institution :
Dept. of Phys., Linkoping Univ., Sweden
fDate :
29 Sept.-1 Oct. 2004
Abstract :
Multiple modulation-doped Ge-dot/SiGe-QW stack structures were grown using MBE, and processed as FET devices for mid/far infrared detection. From a non-optimized device, a broadband photoresponse has been observed in the mid-infrared range of 3-15 μm. A peak responsivity was estimated to be as high as 100 mA/W at T= 20 K. This work indicates that SiGE QD/QW structures using the lateral transport geometry can be a potential candidate for photodetectors operating in far-infrared range.
Keywords :
Schottky gate field effect transistors; germanium; infrared detectors; photodetectors; semiconductor doping; semiconductor quantum dots; semiconductor quantum wells; silicon compounds; 20 K; 3 to 15 mum; B-modulation doped Ge-dot/SiGe-well multiple stacks; Ge-SiGe; MBE; MESFET; far-infrared detection; midinfrared detection; photodetectors; photoresponse; Dark current; Detectors; FETs; MESFETs; Photodetectors; Potential well; Quantum dots; Silicon germanium; Temperature; X-ray scattering;
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
DOI :
10.1109/GROUP4.2004.1416702
