DocumentCode :
2956597
Title :
A Sensor to Detect Normal or Reverse Temperature Dependence in Nanoscale CMOS Circuits
Author :
Wolpert, David ; Ampadu, Paul
Author_Institution :
ECE Dept., Univ. of Rochester, Rochester, NY, USA
fYear :
2009
fDate :
7-9 Oct. 2009
Firstpage :
193
Lastpage :
201
Abstract :
The temperature dependence of MOSFET drain current varies with supply voltage. Two distinct voltage regions exist-a normal dependence (ND) region where an increase in temperature decreases drain current, and a reverse dependence (RD) region where an increase in temperature increases drain current. Knowledge of the temperature dependence is critical for avoiding overheating and wasted performance from excessive guardbands. In this paper, we present the first temperature dependence sensor to detect whether a system is operating in the ND or RD region. The dependence sensor occupies an area of 985 NAND2 equivalent gates. The sensor consumes 15.9 pJ per sample at a supply voltage of 1 V, with a 1°C resolution over the military-specified temperature range of -55°C to 125°C.
Keywords :
CMOS integrated circuits; MOSFET; logic gates; temperature sensors; MOSFET drain current; NAND2 equivalent gates; military-specified temperature range; nanoscale CMOS circuits; normal temperature dependence; reverse temperature dependence; temperature -55 degC to 125 degC; temperature dependence sensor; voltage 1 V; Circuits; Delay; Neodymium; Oscillators; Power system reliability; Sensor systems; Temperature dependence; Temperature sensors; Timing; Voltage; Temperature sensor; reverse temperature dependence; temperature variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 2009. DFT '09. 24th IEEE International Symposium on
Conference_Location :
Chicago, IL
ISSN :
1550-5774
Print_ISBN :
978-0-7695-3839-6
Type :
conf
DOI :
10.1109/DFT.2009.47
Filename :
5372256
Link To Document :
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