DocumentCode :
2956624
Title :
Silicon-on-insulator (SOI): a path to high-density silicon optoelectronics?
Author :
Green, Martin A.
Author_Institution :
Centre for Adv. Silicon Photovoltaics, Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2004
fDate :
29 Sept.-1 Oct. 2004
Firstpage :
154
Lastpage :
155
Abstract :
With the greatly enhanced light-emission efficiencies in bulk silicon light emitting diodes (LEDs), they have investigated prospects for applying these improvements to the co-integration of optical and electronic functions into silicon-based microelectronics. One mitigating factor is the perceived need for microelectronics to move to SOI to maintain present rates of progress, with benefits for ultra-thin Si layers. For further investigation, optical properties of ultra-thin SOI are studied.
Keywords :
elemental semiconductors; integrated optoelectronics; light emitting diodes; silicon; silicon-on-insulator; Si; high-density silicon optoelectronics; light emitting diodes; silicon-on-insulator; Absorption; Australia; High speed optical techniques; Light emitting diodes; Microelectronics; Photonics; Photovoltaic cells; Potential well; Silicon on insulator technology; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN :
0-7803-8474-1
Type :
conf
DOI :
10.1109/GROUP4.2004.1416713
Filename :
1416713
Link To Document :
بازگشت