An ultra-high level second-order nonlinear optical susceptibilities in strained asymmetric GaN-A1GaN-A1N quantum well applicable for integrated optical component design

Author

Rostami, A. ; Baghban, H. ; Saghai, H.Rasooli

Author_Institution

Univ. of Tabriz, Tabriz

fYear

2007

fDate

14-17 May 2007

Firstpage

57

Lastpage

61

Abstract

In this paper an asymmetric structure for enhancement of second-order nonlinear optical susceptibilities in the strained asymmetric GaN-AlGaN- A1N QW is proposed. In this structure, the strain-induced spontaneous and piezoelectric effects have been taken into account, and the second-order optical susceptibility of the delta -doped step QW structure have been analyzed by considering the Shrodinger-Poisson self-consistent for different Al mole fraction x, step position, and pump photon energy homega .The magnitudes of the results show an enhancement more than 400 times compared with traditional strained QWs.

Keywords

nonlinear optical susceptibility; semiconductor quantum wells; Shrodinger-Poisson self-consistent; integrated optical component design; piezoelectric effects; quantum well; second-order nonlinear optical susceptibilities; strained structure; Fiber nonlinear optics; Integrated optics; Nonlinear optical devices; Nonlinear optics; Optical design; Optical devices; Optical pumping; Optical refraction; Ultrafast optics; Wavelength division multiplexing; Asymmetric Quantum Well; Higher order nonlinearity; Optical Susceptibility; Strained Structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications and Malaysia International Conference on Communications, 2007. ICT-MICC 2007. IEEE International Conference on

Conference_Location

Penang

Print_ISBN

978-1-4244-1094-1

Electronic_ISBN

978-1-4244-1094-1

Type

conf

DOI

10.1109/ICTMICC.2007.4448605

Filename

4448605