DocumentCode :
2956820
Title :
Using RRNS Codes for Cluster Faults Tolerance in Hybrid Memories
Author :
Haron, Nor Zaidi ; Hamdioui, Said
Author_Institution :
Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands
fYear :
2009
fDate :
7-9 Oct. 2009
Firstpage :
85
Lastpage :
93
Abstract :
Hybrid CMOS/non-CMOS memories, in short hybrid memories, have been lauded as future ultra-capacity data memories. Nonetheless, such memories are going to suffer from high degree of cluster faults, which impact their reliability. This paper proposes two modified Redundant Residue Number Systems (RRNS) based error correcting codes to tolerate cluster faults in hybrid memories, namely (i) Three Non-Redundant Moduli RRNS (3NRM-RRNS) and (ii) Two Non-Redundant Moduli RRNS (2NRM-RRNS). Experimental results and analysis show that 3NRM-RRNS and 2NRM-RRNS possess competitive error correction capability to that of Reed-Solomon (RS) and conventional RRNS (C-RRNS), but at lower cost (reduced code size, lower performance penalty). E.g., for 16-bit memory 2NRM-RRNS provides a bit-wise error correction capability up to t = 41.5% using 41 bits codeword, whereas RS offers only up to t = 33.3% using 48 bits and C-RRNS supports up to t = 31.1% using 61 bits. In addition, 2NRM-RRNS is 5.6 times faster than C-RRNS in recovering a correct data, which in turn results in higher speed decoding performance.
Keywords :
CMOS memory circuits; error correction codes; fault tolerance; residue number systems; 2NRM-RRNS; 3NRM-RRNS; bit-wise error correction; cluster faults tolerance; correct data recovery; error correcting codes; hybrid CMOS/non-CMOS memories; redundant residue number systems; three nonredundant moduli RRNS; two nonredundant moduli RRNS; ultra-capacity data memories; CMOS technology; Circuit faults; Costs; Data engineering; Decoding; Error correction codes; Fault tolerance; Fault tolerant systems; Geometry; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 2009. DFT '09. 24th IEEE International Symposium on
Conference_Location :
Chicago, IL
ISSN :
1550-5774
Print_ISBN :
978-0-7695-3839-6
Type :
conf
DOI :
10.1109/DFT.2009.37
Filename :
5372268
Link To Document :
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