AlGaAs QPM waveguides fabricated by GaAs/Ge/GaAs [100] sublattice reversal epitaxy

Summary form only given. Periodically domain-inverted GaAs crystals for quasi phase matched (QPM) devices have attract much attention because the large optical nonlinearity of GaAs crystals, e.g. d/sub 35/(GaAs)=170 pm at 1.064 /spl mu/m, will offer high conversion efficiency. Periodically domain-inverted AlGaAs waveguides based on wafer bonding followed by overgrowth have been reported. We have proposed and demonstrated an alternative way, sublattice reversal epitaxy, to fabricate domain-inverted structure in the GaAs/Si/GaAs [100] system. Much higher qualities of domain-inverted GaAs epitaxial films be grown by sublattice reversal epitaxy in the lattice-matched GaAs/Ge/GeAs [100] system and GaAs overgrowth on the periodically patterned template allows us to attain periodical domain inversion in GaAs crystals.