Title :
High-power highly reliable 980-nm pump laser diodes
Author :
Ishikawa, Seiichiro ; Fukagai, K. ; Chi, Hiroaki ; Kawai, Takaaki
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
The 980-nm InGaAs strained quantum-well lasers hold promise as pumping light sources for Er3+-doped fiber amplifiers. However, the lifetime of these lasers is limited by internal dark line defects (DLDs) and catastrophic optical damage (COD) at facets. In this paper, we focus on the degradation mechanisms of DLD and COD failures and verify that these types of failure do not occur within 300,000 hours at 100-mW output power through accelerated aging tests at various temperatures and light output powers
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser reliability; life testing; optical pumping; quantum well lasers; semiconductor device reliability; 100 mW; 300000 hour; 980 nm; InGaAs; accelerated aging; catastrophic optical damage; dark line defects; degradation; failure; high-power lasers; laser diodes; lifetime; pumping light sources; reliability; strained quantum-well lasers; Diode lasers; Erbium; Fiber lasers; Indium gallium arsenide; Laser excitation; Light sources; Optical fiber amplifiers; Power generation; Pump lasers; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484856