DocumentCode
295693
Title
Performance of 980 nm pump laser diodes with GaAs/AlAs graded short period superlattice waveguides
Author
Evtikhiev, V.P. ; Kudryashov, I.V. ; Tokranov, V.E. ; Yu, J.S. ; Yang, S.K. ; Pak, G. ; Kim, T.I.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
255
Abstract
Short period superlattices (SPSs) allow precise control of epitaxial layers and the material quality is generally superior to the equivalent solid solution. These advantages have been utilized in 980 nm pump laser diodes; N.K. Dutta et al. (1992) replaced the In0.2Ga0.8As active layer with 4 periods of 1 monolayer of InAs and 4 monolayers of GaAs; T. Hayakawa et al. (1993) used 79 periods of 2 monolayers of GaAs and 2.5 monolayers of Al0.45Ga0.55As in the place of GaAs barriers. The superior material quality of SPS should be most advantageous in the waveguide. Lasing photons oscillate along the waveguide before being emitted through the front facet; the loss in this region should be minimized for low threshold and good lasing efficiency. In the paper, we present the performance of 980 nm pump laser diodes with GaAs/AlAs graded SPS waveguides
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser beams; molecular beam epitaxial growth; optical losses; optical pumping; optical waveguides; ridge waveguides; semiconductor lasers; semiconductor superlattices; waveguide lasers; 980 nm; GaAs-AlAs; GaAs/AlAs; epitaxial layers; front facet; graded short period superlattice waveguides; lasing efficiency; lasing photons; loss; low threshold; material quality; monolayer; performance; pump laser diodes; waveguide laser; Diode lasers; Epitaxial layers; Gallium arsenide; Laser excitation; Optical materials; Optical waveguides; Pump lasers; Solids; Superlattices; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484858
Filename
484858
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