A 3 V GSM baseband transmitter

Author

Wong, C.S.

Author_Institution

LSI Logic Corp., Milpitas, CA, USA

fYear

1998

fDate

11-13 June 1998

Firstpage

120

Lastpage

123

Abstract

A dual-channel baseband transmitter has been designed for GSM cellular phone application. It has been fabricated in a 0.35 /spl mu/m digital CMOS process as part of a single-chip solution for baseband processing. Each channel consists of a switched-capacitor DAC, a switched-capacitor filter, a class AB buffer, and an active RC filter. The lack of on-chip precision capacitors and resistors poses a major challenge in designing these analog building blocks. The current consumption is 8.8 mA and the total active area is 5.1 mm/sup 2/. The channel response meets the GMSK spectral mask, and a real GSM call has been made with this transmitter.

Keywords

active filters; buffer circuits; cellular radio; digital-analogue conversion; radio transmitters; switched capacitor filters; 0.35 micron; 3 V; 8.8 mA; GSM; active RC filter; analog building blocks; cellular phone application; channel response; class AB buffer; current consumption; digital CMOS process; dual-channel baseband transmitter; single-chip solution; spectral mask; switched-capacitor DAC; switched-capacitor filter; total active area; Active filters; Analog circuits; Baseband; CMOS process; Capacitors; Cellular phones; GSM; Radio frequency; Resistors; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4766-8

Type

conf

DOI

10.1109/VLSIC.1998.688023

Filename

688023