A new fabrication method of micro-grating and its application to long wavelength distributed feedback laser diode

Author

Park, Chongdae ; Kim, Hyung Mun ; Oh, Dae Kon ; Kim, Jeong Soo ; Choo, Heung Ro ; Kim, Hongman ; Pyun, Kwang Eui

Author_Institution

Optoelectron. Sect., Electron. & Telecommun. Res. Inst., Taejeon, South Korea

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

268

Abstract

Summary form only given. Tne fabrication technology of the first order InP grating has been one of the important steps to make long wavelength distributed feedback [DFB] laser diodes. In this paper, the rectangular grating is fabricated from an intermediate SiN_x layer on InP substrate by using the conventional holographic exposure and RIE. To our knowledge, our process is the first report that SiN_x layer is utilized not only as the image transferred layer from photoresist layer but also as the mask layer for InP dry etching

Keywords

III-V semiconductors; distributed feedback lasers; holographic gratings; holography; indium compounds; optical fabrication; optical images; photoresists; semiconductor lasers; sputter etching; DFB laser diodes; InP; InP dry etching; RIE; SiN; SiN_x layer; conventional holographic exposure; first order InP grating; image transferred layer; intermediate SiN_x layer; laser diode fabrication methods; long wavelength distributed feedback laser diode; mask layer; micro-grating; photoresist layer; rectangular grating; Diode lasers; Gratings; Holography; Indium phosphide; Optical device fabrication; Resists; Shape; Silicon compounds; Wet etching; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484864

Filename

484864