Title :
Characteristics of polycrystalline 3C-SiC thin films grown on thermal oxided Si wafers by single precursor hexamethyldisilane
Author :
Kim, Kang San ; Chung, Gwiv Sang
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan
Abstract :
This paper presents the growth conditions and characteristics of polycrystalline (poly) 3C-SiC thin films for micro/nano-electromechaical systems (M/NEMS) applications. The growth of the poly 3C-SiC thin film on oxided Si wafers was accomplished by APCVD using single precursor hexamethyldisilane (HMDS: Si2(CH3)6). Depositions were performed under various temperatures and HMDS flow rates, which were adjusted from 1000 to 1200degC and from 6 to 8 sccm, respectively. Moreover, the effect of the addition of H2 was studied as a means to improve surface roughness. The thermal and mechanical properties of poly 3C-SiC were investigated. The optimal growth conditions for the poly 3C-SiC thin film are a deposition temperature of 1100degC, HMDS flow rate of 8 sccm and a H2 flow rate of 100 sccm.
Keywords :
chemical vapour deposition; micromechanical devices; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; H2; HMDS flow rate; MEMS; NEMS; SiC; deposition temperature; growth conditions; mechanical properties; micronanoelectromechaical systems; polycrystalline 3C-SiC thin films; single precursor hexamethyldisilane; surface roughness; temperature 1000 degC to 1200 degC; thermal oxided wafers; thermal properties; Crystallization; Inductors; Nanoelectromechanical systems; Optical films; Rough surfaces; Semiconductor films; Semiconductor thin films; Silicon carbide; Substrates; Temperature;
Conference_Titel :
Strategic Technology, 2007. IFOST 2007. International Forum on
Conference_Location :
Ulaanbaatar
Print_ISBN :
978-1-4244-3589-0
Electronic_ISBN :
978-1-4244-1831-2
DOI :
10.1109/IFOST.2007.4798632
