Title :
Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes
Author :
Wang, M.C. ; Lin, W. ; Shi, T.T. ; Liao, H.H. ; Chang, H.L. ; Su, J.Y. ; Tu, Y.K.
Author_Institution :
Telecommun. Lab., Min. of Transp. & Commun., Taoyuan, Taiwan
Abstract :
Summary form only given. In conclusion, we have fabricated 1.3-μm AlGaInAs-InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. In the talk, device characteristics of further optimized 1.3-μm AlGaInAs-InP uncooled lasers will be presented comprehensively
Keywords :
III-V semiconductors; aluminium compounds; compensation; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 μm AlGaInAs/InP uncooled laser diodes; 1.3 mum; AlGaInAs-InP; AlGaInAs-InP strain-compensated multi-quantum-well self-aligned ridge laser fabrication; AlGaInAs-InP uncooled lasers; device characteristics; high-speed characteristics; high-temperature; optimized; ultra-high speed operation; ultra-high temperature; Indium phosphide; Laser noise; Power generation; Resonance; Resonant frequency; Semiconductor device noise; Semiconductor lasers; Space vector pulse width modulation; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484869
