Low threshold 1.3 μm-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure

Author

Yokouchi, N. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.

Author_Institution

Lab. for R&D, Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

284

Abstract

Semiconductor lasers emitting at 1.3 μm are important light sources for optical communication systems. We previously reported on 1.3 μm GaInAsP-InP tensile-strained QW lasers emitting at 1.3 μm with low threshold current density. In this paper, we report low threshold buried heterostructure (BH) lasers

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; infrared sources; optical communication equipment; quantum well lasers; tensile strength; 1.3 μm; 1.3 mum; GaInAsP-InP; GaInAsP-InP tensile-strained QW lasers; buried heterostructure; light sources; low threshold; low threshold buried heterostructure lasers; low threshold current density; optical communication systems; tensile-strained quantum well lasers; Coatings; Electrons; Estimation theory; Indium phosphide; Laser modes; Laser theory; Optical materials; Optical waveguides; Quantum well lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484871

Filename

484871