Title :
Unusual temperature dependence of quantum well lasers
Author :
Young, C.L. ; Guan, Y. ; Zory, P.S. ; Mawst, L. ; Bhattacharya, A. ; Botez, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
GaAs single quantum well lasers have been fabricated, which have constant threshold current and increasing slope efficiency as their heat sink temperature is raised from 85 K to 150 K. The cause is shown to be unusual behavior of the internal quantum efficiency
Keywords :
III-V semiconductors; gallium arsenide; quantum well lasers; 85 to 150 K; GaAs; heat sink; internal quantum efficiency; single quantum well lasers; slope efficiency; temperature dependence; threshold current; Current measurement; Gallium arsenide; Heat sinks; Laser modes; Optical materials; Pulsed laser deposition; Quantum well lasers; Temperature dependence; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484872
