DocumentCode
295706
Title
Unusual temperature dependence of quantum well lasers
Author
Young, C.L. ; Guan, Y. ; Zory, P.S. ; Mawst, L. ; Bhattacharya, A. ; Botez, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
286
Abstract
GaAs single quantum well lasers have been fabricated, which have constant threshold current and increasing slope efficiency as their heat sink temperature is raised from 85 K to 150 K. The cause is shown to be unusual behavior of the internal quantum efficiency
Keywords
III-V semiconductors; gallium arsenide; quantum well lasers; 85 to 150 K; GaAs; heat sink; internal quantum efficiency; single quantum well lasers; slope efficiency; temperature dependence; threshold current; Current measurement; Gallium arsenide; Heat sinks; Laser modes; Optical materials; Pulsed laser deposition; Quantum well lasers; Temperature dependence; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484872
Filename
484872
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