Title :
Improved differential quantum efficiency for long-wavelength InGaAs/InGaAsP/InP SCH-SQW lasers with optimized multi-quantum barriers (MQB) design
Author :
Chen, Kuo Feng ; Hsin, Wei
Author_Institution :
Inst. of Electro-Optical Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We present a way to find the optimal device design region for the MQB structure by introducing the blocking efficiency for the leakage carriers. Our method can be used to calculate the improvement on the differential quantum efficiency for any MQB designs
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser theory; quantum well lasers; InGaAs-InGaAsP-InP; MQB structure; blocking efficiency; differential quantum efficiency; leakage carriers; long-wavelength SCH-SQW lasers; multi-quantum barriers; optimal device design; Design optimization; Electrons; Indium gallium arsenide; Indium phosphide; Lasers and electrooptics; Optical design; Optical materials; Quantum well lasers; Reflectivity; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484873
