Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with non-planar geometries

Author

Cresswell, M.W. ; Guillaume, N.M.P. ; Allen, R.A. ; Guthrie, W.F. ; Ghoshtagore, R.N. ; Owen, J.C., III ; Osborne, Z. ; Sullivan, N. ; Linholm, L.W.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1998

fDate

23-26 Mar 1998

Firstpage

29

Lastpage

38

Abstract

This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with nonplanar geometries in monocrystalline silicon-on-insulator films. The end application is using the uniquely high repeatability and low cost of electrical CD (critical dimension) metrology to serve as a secondary reference in establishing a traceability path for CD-reference artifacts

Keywords

electric resistance measurement; micromachining; micromechanical devices; semiconductor device testing; silicon-on-insulator; size measurement; thin film resistors; CD metrology cost; CD-reference artifact traceability path; CD-reference artifacts; MEMS; V/I measurements; electrical CD metrology; electrical critical dimension metrology; electrical linewidth test structure patterning; electrical linewidth test structures; four-terminal sheet resistors; monocrystalline films; monocrystalline silicon-on-insulator films; nonplanar film geometries; repeatability; sheet resistance; Costs; Electric resistance; Electric variables measurement; Electrical resistance measurement; Geometry; Metrology; Resistors; Semiconductor films; Silicon on insulator technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688030

Filename

688030