DocumentCode :
29571
Title :
A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors
Author :
Chang Hyun Kim ; Castro-Carranza, Alejandra ; Estrada, M. ; Cerdeira, Antonio ; Bonnassieux, Yvan ; Horowitz, Gilles ; Iniguez, B.
Author_Institution :
Laboratoire de Physique des Interfaces et des Couches Minces (CNRS UMR-7647), Ecole Polytechnique, Palaiseau, France
Volume :
60
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
1136
Lastpage :
1141
Abstract :
Here, we propose an advanced compact analytical current–voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of OFETs. All model parameters were extracted by a systematic method, and the comparison of the modeled current with the experimental data on pentacene-based OFETs confirmed the validity of the model over a wide operation range.
Keywords :
Analytical models; Data models; Integrated circuit modeling; Mathematical model; OFETs; Semiconductor device modeling; Asymptotic behaviors; circuit simulation; compact modeling; organic field-effect transistors (OFETs);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2238676
Filename :
6420920
Link To Document :
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