DocumentCode
295712
Title
InGaAs/GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD
Author
Lammert, R.M. ; Forbes, D.V. ; Smith, G.M. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
298
Abstract
We report the design and operation of InGaAs/GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by an atmospheric pressure metalorganic chemical vapor deposition (MOCVD) three-step selective-area growth process
Keywords
III-V semiconductors; chemical vapour deposition; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical fabrication; quantum confined Stark effect; quantum well lasers; InGaAs-GaAs; QCSE modulator; atmospheric pressure MOCVD; fabrication; intracavity electroabsorption modulator; monolithically integration; quantum-well laser; selective-area growth; Absorption; Epitaxial growth; Extinction ratio; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical losses; Optical modulation; Power generation; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484878
Filename
484878
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