Title :
A new method for electrical extraction of spacer width, poly sheet resistance, and poly CD in salicide process
Author :
Rezvani, G.A. ; Bothra, Subhas ; Lin, Xi-Wei ; Ho, Anh
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
A new method for extraction of polysilicon CD (critical dimension) and poly sheet resistance for narrow poly lines is developed. This new method is especially useful in salicide (self-aligned silicide) processes, where the standard method of electrical extraction of poly sheet resistance is from a Van Der Pauw structure; use of that method to extract the CD from a narrow poly line is no longer applicable due to the poly sheet resistance dependence on poly line width. In addition, the new method allows for electrical extraction of spacer width, which is not extractable with the standard method. This method is applied to salicided poly lines in a 0.25 μm technology, and the results of measurements are discussed and compared with the standard method
Keywords :
CMOS integrated circuits; electric resistance; elemental semiconductors; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; silicon; size measurement; 0.25 micron; CMOS devices; Si; Van Der Pauw structure; electrical poly CD extraction; electrical poly sheet resistance extraction; electrical spacer width extraction; poly CD; poly line width; poly sheet resistance; polysilicon critical dimension; polysilicon lines; polysilicon sheet resistance; salicide process; salicided poly lines; self-aligned silicide processes; spacer width; Electric resistance; Electric variables measurement; Electrical resistance measurement; Measurement standards; Microelectronics; Production; Space technology; Standards development; Testing; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688034
