A new method for electrical extraction of spacer width, poly sheet resistance, and poly CD in salicide process

Author

Rezvani, G.A. ; Bothra, Subhas ; Lin, Xi-Wei ; Ho, Anh

Author_Institution

VLSI Technol. Inc., San Jose, CA, USA

fYear

1998

fDate

23-26 Mar 1998

Firstpage

45

Lastpage

49

Abstract

A new method for extraction of polysilicon CD (critical dimension) and poly sheet resistance for narrow poly lines is developed. This new method is especially useful in salicide (self-aligned silicide) processes, where the standard method of electrical extraction of poly sheet resistance is from a Van Der Pauw structure; use of that method to extract the CD from a narrow poly line is no longer applicable due to the poly sheet resistance dependence on poly line width. In addition, the new method allows for electrical extraction of spacer width, which is not extractable with the standard method. This method is applied to salicided poly lines in a 0.25 μm technology, and the results of measurements are discussed and compared with the standard method

Keywords

CMOS integrated circuits; electric resistance; elemental semiconductors; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; silicon; size measurement; 0.25 micron; CMOS devices; Si; Van Der Pauw structure; electrical poly CD extraction; electrical poly sheet resistance extraction; electrical spacer width extraction; poly CD; poly line width; poly sheet resistance; polysilicon critical dimension; polysilicon lines; polysilicon sheet resistance; salicide process; salicided poly lines; self-aligned silicide processes; spacer width; Electric resistance; Electric variables measurement; Electrical resistance measurement; Measurement standards; Microelectronics; Production; Space technology; Standards development; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688034

Filename

688034