Title :
Current status and issues of X-ray mask
Author :
Uchiyama, Shingo
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
The X-ray mask is the most critical and most challenging element of a proximity X-ray lithography system, because the mask´s dimensions must equal the final device dimensions and the mask´s membrane film, which is only about 2 mm thick, must support a heavy metal absorber pattern. In NTT, we have developed fabrication technologies for highly accurate and defect-free masks, such as multiple exposure and distortion compensation methods in the electron-beam writing step, highly accurate dry etching, and inspection and repair of mask defects. In addition, the feasibility of proximity X-ray lithography was confirmed by fabricating a device. This article describes the current status of and issues with X-ray mask technology
Keywords :
X-ray masks; electron beam lithography; etching; inspection; integrated circuit technology; integrated circuit testing; integrated circuit yield; maintenance engineering; membranes; proximity effect (lithography); surface structure; 2 mm; X-ray mask; X-ray mask technology; defect-free masks; device dimensions; device fabrication; distortion compensation method; dry etching; electron-beam writing; heavy metal absorber pattern; inspection; mask defects; mask dimensions; mask fabrication technology; mask membrane film; multiple exposure method; proximity X-ray lithography; proximity X-ray lithography system; repair; Biomembranes; Fabrication; Integrated circuit technology; Silicon carbide; Silicon compounds; Ultraviolet sources; Very large scale integration; Writing; X-ray imaging; X-ray lithography;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688038
