Title :
A new method of obtaining scattering matrix of microwave SOI MOSFET device
Author :
Chee, ChenJie ; Li, GouHui ; Huang, Chang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The paper proposes a new method to obtain the scattering matrix of SOI MOSFET devices by solving the Poisson equation and current continuity equations together with the telegraph equations of transmission lines for input and output matching networks with a numerical solution. It can describe the nonlinear properties of a transistor under large signal conditions
Keywords :
MOSFET; S-matrix theory; microwave field effect transistors; semiconductor device models; silicon-on-insulator; transmission line matrix methods; Poisson equation; current continuity equations; large signal conditions; microwave SOI MOSFET; nonlinear properties; numerical solution; output matching networks; scattering matrix; telegraph equations; transmission lines; Impedance matching; MMICs; MOSFET circuits; Microelectronics; Microwave devices; Microwave theory and techniques; Poisson equations; Scattering; Telegraphy; Transmission line matrix methods;
Conference_Titel :
ASIC, 1996., 2nd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
7-5439-0940-5
DOI :
10.1109/ICASIC.1996.562842
