DocumentCode
2957217
Title
A new method of obtaining scattering matrix of microwave SOI MOSFET device
Author
Chee, ChenJie ; Li, GouHui ; Huang, Chang
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
1996
fDate
21-24 Oct 1996
Firstpage
421
Lastpage
424
Abstract
The paper proposes a new method to obtain the scattering matrix of SOI MOSFET devices by solving the Poisson equation and current continuity equations together with the telegraph equations of transmission lines for input and output matching networks with a numerical solution. It can describe the nonlinear properties of a transistor under large signal conditions
Keywords
MOSFET; S-matrix theory; microwave field effect transistors; semiconductor device models; silicon-on-insulator; transmission line matrix methods; Poisson equation; current continuity equations; large signal conditions; microwave SOI MOSFET; nonlinear properties; numerical solution; output matching networks; scattering matrix; telegraph equations; transmission lines; Impedance matching; MMICs; MOSFET circuits; Microelectronics; Microwave devices; Microwave theory and techniques; Poisson equations; Scattering; Telegraphy; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 1996., 2nd International Conference on
Conference_Location
Shanghai
Print_ISBN
7-5439-0940-5
Type
conf
DOI
10.1109/ICASIC.1996.562842
Filename
562842
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