Title :
Calculation of interference function for textured polycrystal
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
Abstract :
A mathematical description of disorder in a textured polycrystal is presented. The expression for the interference function, which can be used for the polycrystal conductivity calculation, is obtained and the interference function for the textured polycrystal is calculated.
Keywords :
carrier relaxation time; crystallites; electrical conductivity; elemental semiconductors; silicon; texture; Si; charge carrier relaxation time; crystallites; interference function; polycrystal conductivity calculation; polycrystalline silicon; textured polycrystal; Atomic measurements; Charge carriers; Conductivity; Crystallization; Electrons; Interference; Potential energy; Scattering; Tin;
Conference_Titel :
Strategic Technology, 2007. IFOST 2007. International Forum on
Conference_Location :
Ulaanbaatar
Print_ISBN :
978-1-4244-3589-0
Electronic_ISBN :
978-1-4244-1831-2
DOI :
10.1109/IFOST.2007.4798646
