Title :
A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements
Author :
Llinares, P. ; Ghibaudo, G. ; Gambetta, N. ; Mourier, Y. ; Monroy, A. ; Lecoy, G. ; Chroboczek, J.A.
Author_Institution :
CNET, Meylan, France
Abstract :
A novel method of extraction of emitter and base resistances of bipolar junction transistors (BJTs) involving both static characteristics and low frequency noise data is proposed and tested on quasi-self-aligned BJTs. The method requires no special test structures and applies to transistors working in the normal operation regime. It may be therefore readily applied to test procedures for various types of BJTs
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device noise; semiconductor device testing; BJT test procedures; BJTs; base resistance; base resistance extraction; bipolar junction transistors; emitter resistance; emitter resistance extraction; low frequency noise measurements; quasi-self-aligned BJTs; static characteristics; static measurements; test structures; Bipolar transistors; Data mining; Electrical resistance measurement; Fluctuations; Frequency measurement; Low-frequency noise; Microelectronics; Noise measurement; Semiconductor device noise; Testing;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688043
