DocumentCode :
2957308
Title :
1.55 /spl mu/m DFB laser integrated on erbium doped phosphate glass substrate
Author :
Blaize, S. ; Broquin, J.E. ; Barbier, D. ; Cassagnetes, C.
Author_Institution :
Univ. Joseph Fourier, Grenoble, France
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only given. Recently, a new efficient waveguide amplifier on phosphate glass has been demonstrated. In this paper, we present the first steps of fabrication and analysis of 10 monolithically integrated DFB lasers on a chip. The starting point of our work is a Er/Yb co-doped phosphate, on which buried channel waveguides have been realized using ion exchanged techniques. The glass is etched sufficiently to get more than 60% of reflectivity at Bragg wavelength. Under pumping at 980 nm, single longitudinal mode operation around 1.55 /spl mu/m is demonstrated for all the ten waveguides of the chip.
Keywords :
distributed feedback lasers; erbium; integrated optoelectronics; ion exchange; optical communication equipment; optical fabrication; optical pumping; solid lasers; waveguide lasers; wavelength division multiplexing; ytterbium; 1.55 mum; 488 nm; 980 nm; Bragg wavelength; DFB laser; Er/Yb co-doped phosphate; buried channel waveguide; diffraction gratings; erbium doped phosphate glass substrate; ion exchanged techniques; monolithically integrated DFB lasers; reflectivity; single longitudinal mode operation; waveguide laser amplifier; Erbium; Erbium-doped fiber lasers; Glass;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.910393
Filename :
910393
Link To Document :
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