Title :
Anomalous geometry dependence of source/drain resistance in narrow-width MOSFETs
Author :
Scholten, A.J. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The geometrical scaling of the intrinsic source/drain series resistance of MOSFETs is investigated using a large selection of transistor geometries in 0.5 μm CMOS technology. It is shown both experimentally and theoretically that for narrow-width MOSFETs with dog-bone layouts, the source/drain resistance is no longer inversely proportional to the channel width. A new scaling rule for the source/drain resistance and thus for the mobility reduction parameter θ1 of MOS Model 9 leads to a considerably improved modelling accuracy in both the linear and saturation regimes
Keywords :
CMOS integrated circuits; MOSFET; electric resistance; integrated circuit design; integrated circuit modelling; integrated circuit testing; 0.5 micron; CMOS technology; MOS Model 9; MOSFET dog-bone layouts; MOSFETs; anomalous geometry dependence; channel width; geometrical scaling; intrinsic source/drain series resistance; linear regime; mobility reduction parameter; modelling accuracy; narrow-width MOSFETs; saturation regime; scaling rule; source/drain resistance; transistor geometries; Bones; CMOS technology; Circuit simulation; Contact resistance; Current measurement; Geometry; Laboratories; MOSFETs; Solid modeling; Testing;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688046
