Anomalous geometry dependence of source/drain resistance in narrow-width MOSFETs

Author

Scholten, A.J. ; Klaassen, D.B.M.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1998

fDate

23-26 Mar 1998

Firstpage

77

Lastpage

82

Abstract

The geometrical scaling of the intrinsic source/drain series resistance of MOSFETs is investigated using a large selection of transistor geometries in 0.5 μm CMOS technology. It is shown both experimentally and theoretically that for narrow-width MOSFETs with dog-bone layouts, the source/drain resistance is no longer inversely proportional to the channel width. A new scaling rule for the source/drain resistance and thus for the mobility reduction parameter θ₁ of MOS Model 9 leads to a considerably improved modelling accuracy in both the linear and saturation regimes

Keywords

CMOS integrated circuits; MOSFET; electric resistance; integrated circuit design; integrated circuit modelling; integrated circuit testing; 0.5 micron; CMOS technology; MOS Model 9; MOSFET dog-bone layouts; MOSFETs; anomalous geometry dependence; channel width; geometrical scaling; intrinsic source/drain series resistance; linear regime; mobility reduction parameter; modelling accuracy; narrow-width MOSFETs; saturation regime; scaling rule; source/drain resistance; transistor geometries; Bones; CMOS technology; Circuit simulation; Contact resistance; Current measurement; Geometry; Laboratories; MOSFETs; Solid modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688046

Filename

688046