DocumentCode :
295738
Title :
Electron emission observations from as-grown and vacuum-coated chemical vapor deposited diamond
Author :
Lamouri, A. ; Yaxin Wang ; Mearini, G.T. ; Krainsky, I.L. ; Dayton, J.A., Jr. ; Mueller, W.
Author_Institution :
Gen. Vacuum Inc., Cleveland, OH, USA
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
310
Lastpage :
314
Abstract :
Field emission has been observed from Chemical Vapor Deposited (CVD) diamond grown on Mo and Si substrates. Emission was observed at fields as low as 20 kV/cm. The samples were tested in the as-grown form, and after coating with thin films of Au, CsI and Ni. The emission current was typically maximum at the onset of the applied field, but was unstable, and decreased rapidly with time from the as-grown films. Thin Au layers, /spl sim/15 nm thick, vacuum deposited onto the diamond samples significantly improved the stability of the emission current at values approximately equal to those from uncoated samples at the onset of the applied field. Thin layers of CsI, /spl sim/5 nm thick, were also observed to improve the stability of the emission current but at values less than those from the uncoated samples at the onset of the applied field. While, Au and Csl improved the stability of the emission, Ni was observed to have no effect.
Keywords :
cathodes; chemical vapour deposition; diamond; electron field emission; elemental semiconductors; molybdenum; silicon; vacuum microelectronics; 15 nm; 5 mm; C-Mo; C-Si; Mo; Si; applied field.; as-grown form; current stability; electron emission observations; emission current; vacuum-coated chemical vapor deposition; Anodes; Chemical vapor deposition; Electron emission; Gold; NASA; Semiconductor films; Stability; Substrates; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487056
Filename :
487056
Link To Document :
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