A New RF SiCMOS SDD Model for Quantifying Individual Contribution to Distortion from Transistor´s Nonlinear Parameters

This work reports a new implementation of a transistor model aiming to facilitate a closer understanding of nonlinear elements in silicon CMOS transistors operating at high frequencies. Using this model, the contribution of each non linear element to the total distortion of the transistor can be individually quantified using a superposition method. The new model is implemented entirely using symbolically defined devices (SDD) for each nonlinear parameter individually. The transistor used is a foundry 180 nm RF SiCMOS capable of operating up to 10 GHz. The SDD model is validated by examining the behavior of the table-based model against the behavior of the modeled transistor in a single tone sweep test from very small input powers up to deep in compression. This work was carried out using Agilent advanced design systems tool (ADS).