Title :
Ellipsometric measurements on single-crystal silicon spheres [for Avogadro´s constant determination]
Author :
Danzebrink, H.U. ; Wolff, H. ; Becker, P. ; Koenders, L.
Author_Institution :
Phys. Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
Beside other parameters the growth of oxide layers on silicon surfaces depends on the surface preparation and on the crystal orientation. Measurements of the oxide layer thicknesses on silicon spheres are described. The results show a strong dependence on the crystal orientations which may originate from the polishing process. After HF-etching this orientation effect cannot be distinguished anymore.
Keywords :
constants; crystal orientation; ellipsometry; etching; polishing; silicon; thickness measurement; volume measurement; Avogadro´s constant determination; HF-etching; Si; crystal orientation; ellipsometric measurements; growth of oxide layers; oxide layer thickness measurement; phase shifting interferometry; polishing process; single-crystal silicon spheres; surface preparation; volume measurement; Instruments; Optical beams; Optical films; Photodiodes; Rough surfaces; Silicon; Substrates; Surface roughness; Thickness measurement; Volume measurement;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.699965
