Water in interlevel dielectrics: detection and effect on the performance of the MOS IC

Author

Lifshitz, N. ; Smolinsky, G.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1989

fDate

22-24 May 1989

Firstpage

320

Lastpage

324

Abstract

A study of the electrical behavior of silicon-dioxide-based materials that are potentially useful as interlevel dielectrics for the MOS IC is discussed. It is shown that water absorbed in the dielectrics can create a positive mobile charge. The main tool was the triangular voltage sweep (TVS) technique. The shapes of the TVS signals due to motion of alkali ions and due to water-related charge are discussed. It is shown that the TVS signal of a water-related charge exhibits unique features, allowing this charge to be easily distinguished from that of other common contaminants, such as sodium. The effect of the absorbed water on the reliability of the MOS IC is also discussed. Preliminary results indicate that water-bound hydrogen may contribute to the degradation process

Keywords

MOS integrated circuits; circuit reliability; dielectric thin films; electronic conduction in insulating thin films; water; H₂O; MOS IC; SiO₂; absorbed water; alkali ion motion; common contaminants; degradation process; interlevel dielectrics; positive mobile charge; reliability; signal shapes; silicon-dioxide-based materials; triangular voltage sweep; water-bound hydrogen; water-related charge; Aluminum; Dielectric materials; Dielectric measurements; Manufacturing; Plasma measurements; Plasma temperature; Pollution measurement; Shape; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components Conference, 1989. Proceedings., 39th

Conference_Location

Houston, TX

Type

conf

DOI

10.1109/ECC.1989.77766

Filename

77766